TPH1110ENH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 200V 7.2A 8SOP
$0.68
Available to order
Reference Price (USD)
5,000+
$0.63280
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with TPH1110ENH,L1Q, a high-quality Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TPH1110ENH,L1Q provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
Related Products
STMicroelectronics
STB8N65M5
Diodes Incorporated
DMT5015LFDF-7
STMicroelectronics
STW56N65M2-4
Vishay Siliconix
SIHFR220-GE3
Diodes Incorporated
DMP10H400SE-13
Vishay Siliconix
SIHD3N50D-BE3
Microchip Technology
APT45M100J
IXYS
IXFT30N50P
Vishay Siliconix
SQJ418EP-T1_GE3
Toshiba Semiconductor and Storage