SQJ418EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 48A PPAK SO-8
$1.24
Available to order
Reference Price (USD)
3,000+
$0.46248
6,000+
$0.44077
15,000+
$0.42526
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SQJ418EP-T1_GE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SQJ418EP-T1_GE3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Toshiba Semiconductor and Storage
SSM3K35AFS,LF
Rohm Semiconductor
RCX510N25
Sanken
2SK3800VL
STMicroelectronics
SCT30N120
IXYS
IXFA8N85XHV
Vishay Siliconix
SIRA12BDP-T1-GE3
Vishay Siliconix
SI7148DP-T1-GE3
Alpha & Omega Semiconductor Inc.
AOTS21313C
Vishay Siliconix
SQM70060EL_GE3
Renesas Electronics America Inc