TP90H050WS
Transphorm
Transphorm
GANFET N-CH 900V 34A TO247-3
$20.03
Available to order
Reference Price (USD)
1+
$20.03000
500+
$19.8297
1000+
$19.6294
1500+
$19.4291
2000+
$19.2288
2500+
$19.0285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TP90H050WS, a reliable Transistors - FETs, MOSFETs - Single by Transphorm. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TP90H050WS meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 63mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 4.4V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 600 V
- FET Feature: -
- Power Dissipation (Max): 119W (Tc)
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Linear Integrated Systems, Inc.
2N4351 TO-72 4L
onsemi
NTK3139PT5G
Microchip Technology
APT50M50JLL
Rohm Semiconductor
RSF014N03TL
NXP USA Inc.
PMPB23XNE,115
Microchip Technology
APT8011JLL
Sanyo
NTMFS4922NET1G
Panjit International Inc.
PJA3416_R1_00001
onsemi
FQA7N80C-F109
IXYS