TN2106K1-G
Microchip Technology
Microchip Technology
MOSFET N-CH 60V 280MA TO236AB
$0.67
Available to order
Reference Price (USD)
3,000+
$0.37080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TN2106K1-G by Microchip Technology. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TN2106K1-G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Vishay Siliconix
IRFBG30PBF-BE3
Diodes Incorporated
BS170FTA
Panjit International Inc.
PJMD390N65EC_L2_00001
Infineon Technologies
BSC079N03SG
Rectron USA
RM15P60LD
onsemi
NVMFS6H818NWFT1G
Rohm Semiconductor
R6046ANZ1C9
Vishay Siliconix
SQD50P04-09L_GE3
Infineon Technologies
IPP60R090CFD7XKSA1
Renesas Electronics America Inc