IPP60R090CFD7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 25A TO220-3
$7.79
Available to order
Reference Price (USD)
1+
$7.79000
10+
$7.00800
100+
$5.82810
500+
$4.80554
1,000+
$4.12380
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPP60R090CFD7XKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPP60R090CFD7XKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 570µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Renesas Electronics America Inc
RJK0653DPB-00#J5
IXYS
IXFA18N60X
NXP USA Inc.
PHD71NQ03LT,118
onsemi
NVMFS5C680NLWFT1G
Toshiba Semiconductor and Storage
SSM3K347R,LF
Diodes Incorporated
DMP2004WK-7
Vishay Siliconix
SI2304BDS-T1-BE3
Microchip Technology
VN2410L-G-P013
Infineon Technologies
SPD30N03S2L07GBTMA1
Nexperia USA Inc.