TK8A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 550V 7.5A TO220SIS
$1.57
Available to order
Reference Price (USD)
50+
$1.43000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
TK8A55DA(STA4,Q,M) by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TK8A55DA(STA4,Q,M) ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.07Ohm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Central Semiconductor Corp
CMUDM8005 TR PBFREE
STMicroelectronics
STN4NF03L
Vishay Siliconix
SUD50P08-25L-E3
IXYS
IXFX240N25X3
Texas Instruments
NTK3134NT1H
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2304A-F2-0100HF
Panjit International Inc.
PJL9458AL_R2_00001
Infineon Technologies
AUIRF3305
Vishay Siliconix
SIHFBF30S-GE3
Fairchild Semiconductor