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TK3A60DA(STA4,Q,M)

Toshiba Semiconductor and Storage
TK3A60DA(STA4,Q,M) Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 2.5A TO220SIS
$1.08
Available to order
Reference Price (USD)
50+
$0.97720
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack

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