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TK16A60W5,S4VX

Toshiba Semiconductor and Storage
TK16A60W5,S4VX Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 15.8A TO220SIS
$2.64
Available to order
Reference Price (USD)
1+
$2.64000
500+
$2.6136
1000+
$2.5872
1500+
$2.5608
2000+
$2.5344
2500+
$2.508
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 40W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack

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