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TK31J60W5,S1VQ

Toshiba Semiconductor and Storage
TK31J60W5,S1VQ Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 30.8A TO3P
$7.92
Available to order
Reference Price (USD)
25+
$7.19560
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 230W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3

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