TK090N65Z,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 30A TO247
$6.03
Available to order
Reference Price (USD)
1+
$6.03000
500+
$5.9697
1000+
$5.9094
1500+
$5.8491
2000+
$5.7888
2500+
$5.7285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with TK090N65Z,S1F, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TK090N65Z,S1F for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.27mA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SIR578DP-T1-RE3
Rohm Semiconductor
SCT3030AW7TL
Rectron USA
RM5N650LD
NXP USA Inc.
PSMN3R7-25YLC,115
onsemi
FQB33N10LTM
onsemi
CPH3350-TL-W
Rohm Semiconductor
RSR025P03TL
onsemi
NTMYS4D1N06CLTWG
Infineon Technologies
SPP80N06S08AKSA1
Infineon Technologies