SCT3030AW7TL
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 70A TO263-7
$41.47
Available to order
Reference Price (USD)
1+
$41.47000
500+
$41.0553
1000+
$40.6406
1500+
$40.2259
2000+
$39.8112
2500+
$39.3965
Exquisite packaging
Discount
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Optimize your electronic systems with SCT3030AW7TL, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SCT3030AW7TL provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 267W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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