TCS1200
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 1.03GHZ 55TU-1
$0.00
Available to order
Reference Price (USD)
25+
$744.26840
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microsemi Corporation's TCS1200 RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.03GHz
- Noise Figure (dB Typ @ f): -
- Gain: 10.2dBd
- Power - Max: 2095W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Current - Collector (Ic) (Max): 60A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55TU-1
- Supplier Device Package: 55TU-1
Related Products
Microsemi Corporation
10A030
Microsemi Corporation
SD1244-12H
Central Semiconductor Corp
CP302-MPSH10-CT
Microsemi Corporation
MDS1100
Central Semiconductor Corp
CP229-2N5109-WN
Microsemi Corporation
MS2608H
Microsemi Corporation
MRF559T
Microsemi Corporation
62089
CEL
NE851M33-A
Microsemi Corporation