MDS1100
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 1.03GHZ 55TU-1
$0.00
Available to order
Reference Price (USD)
25+
$783.95920
Exquisite packaging
Discount
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Microsemi Corporation presents MDS1100: The go-to RF BJT transistor for low-power, high-frequency designs. Its standout features like controlled beta variation and hermetic packaging make it a favorite among telecom engineers. From RFID readers to test equipment, versatility meets precision. Get started request samples or datasheets via our quick-response form!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.03GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.9dB
- Power - Max: 8750W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Current - Collector (Ic) (Max): 100A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 55TU-1
- Supplier Device Package: 55TU-1
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