STW75N65DM6-4
STMicroelectronics
STMicroelectronics
N-CHANNEL 650 V, 33 MOHM TYP., 7
$14.57
Available to order
Reference Price (USD)
1+
$14.57000
500+
$14.4243
1000+
$14.2786
1500+
$14.1329
2000+
$13.9872
2500+
$13.8415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with STW75N65DM6-4 by STMicroelectronics, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, STW75N65DM6-4 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
Related Products
Renesas Electronics America Inc
RJK0390DPA-02#J5A
Infineon Technologies
IPW65R155CFD7XKSA1
Goford Semiconductor
G3404B
Micro Commercial Co
MCB200N06Y-TP
Fairchild Semiconductor
SI4835DY
Micro Commercial Co
MCACL200N04Y-TP
Renesas Electronics America Inc
3SK222-T2-A
Infineon Technologies
IMW65R039M1HXKSA1
Renesas
UPA1808GR-9JG-E1-A
Vishay Siliconix