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G3404B

Goford Semiconductor
G3404B Preview
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
$0.47
Available to order
Reference Price (USD)
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$0.4606
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$0.4559
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$0.4465
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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