STP28N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 20A TO220
$3.89
Available to order
Reference Price (USD)
1+
$3.34000
50+
$2.72840
100+
$2.47310
500+
$1.96272
1,000+
$1.65648
2,500+
$1.55440
5,000+
$1.50336
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STP28N65M2 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STP28N65M2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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