RUE002N02TL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 20V 200MA EMT3
$0.48
Available to order
Reference Price (USD)
3,000+
$0.07000
6,000+
$0.06300
15,000+
$0.05600
30,000+
$0.05250
75,000+
$0.04900
Exquisite packaging
Discount
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RUE002N02TL by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, RUE002N02TL ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: EMT3
- Package / Case: SC-75, SOT-416
