STI6N62K3
STMicroelectronics
STMicroelectronics
MOSFET N-CH 620V 5.5A I2PAK
$1.56
Available to order
Reference Price (USD)
1+
$1.47000
50+
$1.17960
100+
$1.03220
500+
$0.80048
1,000+
$0.63195
2,500+
$0.58982
5,000+
$0.56033
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with STI6N62K3, a reliable Transistors - FETs, MOSFETs - Single by STMicroelectronics. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, STI6N62K3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 620 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Rohm Semiconductor
RV3C002UNT2CL
Vishay Siliconix
SQM40031EL_GE3
Nexperia USA Inc.
PSMN7R8-100PSEQ
Panjit International Inc.
PJA3407_R1_00001
Fairchild Semiconductor
FDB029N06
Renesas Electronics America Inc
RJK0374DSP-01#J0
Fairchild Semiconductor
FDD8796
Toshiba Semiconductor and Storage
SSM3J134TU,LF
Infineon Technologies
IPI50R350CPXKSA1
IXYS