PSMN7R8-100PSEQ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 100A TO220AB
$3.10
Available to order
Reference Price (USD)
1+
$2.61000
50+
$2.10820
100+
$1.89730
500+
$1.47570
1,000+
$1.22273
Exquisite packaging
Discount
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Upgrade your electronic designs with PSMN7R8-100PSEQ by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, PSMN7R8-100PSEQ ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 294W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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