STI260N6F6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 75V 120A I2PAK
$5.56
Available to order
Reference Price (USD)
1+
$6.47000
50+
$5.19760
100+
$4.73550
500+
$3.83460
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STI260N6F6 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STI260N6F6 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Infineon Technologies
IPT60R150G7XTMA1
Toshiba Semiconductor and Storage
SSM6J501NU,LF
IXYS
IXFQ60N50P3
STMicroelectronics
STP65N045M9
Vishay Siliconix
SQJ481EP-T1_GE3
Infineon Technologies
AUIRFS8409-7TRL
Diodes Incorporated
DMP4025LK3-13
NXP Semiconductors
BUK7675-55A,118
Fairchild Semiconductor
FDS7082N3
Microchip Technology