STP65N045M9
STMicroelectronics
STMicroelectronics
N-CHANNEL 650 V, 39 MOHM TYP., 5
$12.32
Available to order
Reference Price (USD)
1+
$12.32000
500+
$12.1968
1000+
$12.0736
1500+
$11.9504
2000+
$11.8272
2500+
$11.704
Exquisite packaging
Discount
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Discover STP65N045M9, a versatile Transistors - FETs, MOSFETs - Single solution from STMicroelectronics, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 4.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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