STF13N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
$2.14
Available to order
Reference Price (USD)
1,000+
$0.93946
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STMicroelectronics presents STF13N65M2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STF13N65M2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
BSC057N08NS3GATMA1
EPC
EPC2051
Infineon Technologies
IRF6674TRPBF
Nexperia USA Inc.
PSMN4R2-60PLQ
Vishay Siliconix
SQD50P03-07_GE3
IXYS
IXTQ150N15P
onsemi
FDS3580
Vishay Siliconix
SIHLZ34S-GE3
Rohm Semiconductor
RD3P100SNTL1
Yangzhou Yangjie Electronic Technology Co.,Ltd