BSC057N08NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 16A/100A TDSON
$2.38
Available to order
Reference Price (USD)
5,000+
$1.05511
10,000+
$1.03557
Exquisite packaging
Discount
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Experience the power of BSC057N08NS3GATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BSC057N08NS3GATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 73µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
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