STD8N60DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 8A DPAK
$1.70
Available to order
Reference Price (USD)
2,500+
$0.70930
5,000+
$0.67773
12,500+
$0.65518
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STD8N60DM2 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STD8N60DM2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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