PJQ4402P_R2_00001
Panjit International Inc.
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with PJQ4402P_R2_00001, a premium Transistors - FETs, MOSFETs - Single from Panjit International Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust PJQ4402P_R2_00001 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
Related Products
Vishay Siliconix
IRF9Z14LPBF
Vishay Siliconix
SI1424EDH-T1-GE3
Vishay Siliconix
SI4178DY-T1-GE3
onsemi
NTHS4101PT1G
onsemi
FQPF7N65CYDTU
onsemi
NVMFS5C460NLAFT3G
Panjit International Inc.
PJD18N20_L2_00001
Alpha & Omega Semiconductor Inc.
AOT288L
Microchip Technology
APT5010JVFR
Infineon Technologies