STD7N65M6
STMicroelectronics

STMicroelectronics
MOSFET N-CH 650V 5A DPAK
$0.92
Available to order
Reference Price (USD)
1+
$0.91910
500+
$0.909909
1000+
$0.900718
1500+
$0.891527
2000+
$0.882336
2500+
$0.873145
Exquisite packaging
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Boost your electronic applications with STD7N65M6, a reliable Transistors - FETs, MOSFETs - Single by STMicroelectronics. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, STD7N65M6 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63