STL16N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 7.5A POWERFLAT
$2.79
Available to order
Reference Price (USD)
3,000+
$1.21770
6,000+
$1.17260
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of STL16N65M2, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, STL16N65M2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 56W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (5x6) HV
- Package / Case: 8-PowerVDFN
Related Products
onsemi
FQA170N06
Vishay Siliconix
SIHG14N50D-E3
Diodes Incorporated
DMT10H010LSS-13
Wolfspeed, Inc.
E3M0280090D
Toshiba Semiconductor and Storage
TPH6R30ANL,L1Q
Infineon Technologies
BTS244ZE3062AATMA1
Vishay Siliconix
SIHG61N65EF-GE3
IXYS
IXFB100N50P
Diodes Incorporated
DMN10H170SVT-7
onsemi