STB10N65K3
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 10A D2PAK
$2.27
Available to order
Reference Price (USD)
1+
$2.27000
500+
$2.2473
1000+
$2.2246
1500+
$2.2019
2000+
$2.1792
2500+
$2.1565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STMicroelectronics presents STB10N65K3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STB10N65K3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
IXYS
IXFR44N50Q3
Diodes Incorporated
DMN3404L-7
Infineon Technologies
IRFH7110TRPBF
Vishay Siliconix
SQJ142ELP-T1_GE3
Infineon Technologies
IPD90N10S406ATMA1
Infineon Technologies
IPB60R180C7ATMA1
Infineon Technologies
IPZ60R017C7XKSA1
IXYS
IXFA80N25X3
onsemi
NTTFSC4821NTAG
Fairchild Semiconductor