DMN3404L-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 5.8A SOT23-3
$0.44
Available to order
Reference Price (USD)
3,000+
$0.08400
6,000+
$0.07630
15,000+
$0.06860
30,000+
$0.06475
75,000+
$0.05821
150,000+
$0.05628
Exquisite packaging
Discount
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Boost your electronic applications with DMN3404L-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN3404L-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 720mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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