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SSM6P35FE,LM

Toshiba Semiconductor and Storage
SSM6P35FE,LM Preview
Toshiba Semiconductor and Storage
MOSFET 2NCH 20V 100MA ES6
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Specifications

  • Product Status: Active
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6

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