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HAT2038RWS-E

Renesas Electronics America Inc
HAT2038RWS-E Preview
Renesas Electronics America Inc
MOSFET N-CH SOP8
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Specifications

  • Product Status: Obsolete
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 3W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP

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