SSM6L35FE,LM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N/P-CH 20V 0.18A/0.1A ES6
$0.43
Available to order
Reference Price (USD)
4,000+
$0.07200
8,000+
$0.06480
12,000+
$0.05760
28,000+
$0.05400
100,000+
$0.05040
Exquisite packaging
Discount
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Discover high-performance SSM6L35FE,LM from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Toshiba Semiconductor and Storage s SSM6L35FE,LM enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
- Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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