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SI3552DV-T1-E3

Vishay Siliconix
SI3552DV-T1-E3 Preview
Vishay Siliconix
MOSFET N/P-CH 30V 6TSOP
$0.73
Available to order
Reference Price (USD)
3,000+
$0.26479
6,000+
$0.24866
15,000+
$0.23252
30,000+
$0.22122
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP

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