SSM6K208FE,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 1.9A ES6
$0.49
Available to order
Reference Price (USD)
1+
$0.49000
500+
$0.4851
1000+
$0.4802
1500+
$0.4753
2000+
$0.4704
2500+
$0.4655
Exquisite packaging
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Enhance your circuit performance with SSM6K208FE,LF, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SSM6K208FE,LF for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: ES6
- Package / Case: SOT-563, SOT-666
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