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DMT10H010LPS-13

Diodes Incorporated
DMT10H010LPS-13 Preview
Diodes Incorporated
MOSFET N-CH 100V 9.4A PWRDI5060
$1.68
Available to order
Reference Price (USD)
2,500+
$0.76560
5,000+
$0.73172
12,500+
$0.70752
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN

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