SQS482EN-T1_BE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 30-V (D-S) 175C MOSFET
$0.96
Available to order
Reference Price (USD)
1+
$0.96000
500+
$0.9504
1000+
$0.9408
1500+
$0.9312
2000+
$0.9216
2500+
$0.912
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SQS482EN-T1_BE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SQS482EN-T1_BE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Harris Corporation
IRF711
Diodes Incorporated
DMT12H7M9SPSW-13
Fairchild Semiconductor
FQP4N50
Goford Semiconductor
GT1003D
Infineon Technologies
IPL65R065CFD7AUMA1
Renesas Electronics America Inc
RJK03H0DPA-00#J5A
Renesas Electronics America Inc
2SK2158-L-A
Diodes Incorporated
DMN3008SFGQ-13
IXYS
IXTY90N055T2
Vishay Siliconix