SQJQ480E-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 80V 150A PPAK 8 X 8
$3.17
Available to order
Reference Price (USD)
2,000+
$1.42650
6,000+
$1.37700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SQJQ480E-T1_GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SQJQ480E-T1_GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8625 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: PowerPAK® 8 x 8
Related Products
Diodes Incorporated
DMN63D1LW-7
Infineon Technologies
IRFU7546PBF
onsemi
NTMFS4108NT3G
Nexperia USA Inc.
BUK7S1R5-40HJ
Panjit International Inc.
PJW3P10A_R2_00001
Vishay Siliconix
SIHP17N60D-GE3
STMicroelectronics
STL19N60DM2
Microchip Technology
TP2540N3-G-P002
Alpha & Omega Semiconductor Inc.
AO4486
Infineon Technologies