BUK7S1R5-40HJ
Nexperia USA Inc.

Nexperia USA Inc.
MOSFET N-CH 40V 260A LFPAK88
$3.57
Available to order
Reference Price (USD)
1+
$3.57000
500+
$3.5343
1000+
$3.4986
1500+
$3.4629
2000+
$3.4272
2500+
$3.3915
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BUK7S1R5-40HJ by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BUK7S1R5-40HJ inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 260A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 242W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK88 (SOT1235)
- Package / Case: SOT-1235