SQJQ148E-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 375A PPAK 8 X 8
$2.48
Available to order
Reference Price (USD)
1+
$2.48000
500+
$2.4552
1000+
$2.4304
1500+
$2.4056
2000+
$2.3808
2500+
$2.356
Exquisite packaging
Discount
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Experience the power of SQJQ148E-T1_GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SQJQ148E-T1_GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 325W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: PowerPAK® 8 x 8
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