DMN14M8UFDF-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
$0.20
Available to order
Reference Price (USD)
1+
$0.20358
500+
$0.2015442
1000+
$0.1995084
1500+
$0.1974726
2000+
$0.1954368
2500+
$0.193401
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover DMN14M8UFDF-7, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1246 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Infineon Technologies
IPT008N06NM5LFATMA1
STMicroelectronics
STL117N4LF7AG
Renesas
2SK3447TZ-E
onsemi
FDMS86101
Renesas Electronics America Inc
2SK3230B-T1-A
Renesas Electronics America Inc
UPA2350T1G(1)-E4-A
Vishay Siliconix
SQJ456EP-T2_GE3
Diodes Incorporated
DMP3008SFGQ-7
Renesas
NP88N04NUG-S18-AY
Vishay Siliconix