SQJ401EP-T2_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 12V 32A PPAK SO-8
$1.09
Available to order
Reference Price (USD)
1+
$1.08900
500+
$1.07811
1000+
$1.06722
1500+
$1.05633
2000+
$1.04544
2500+
$1.03455
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SQJ401EP-T2_GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SQJ401EP-T2_GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 10015 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Fairchild Semiconductor
FCP21N60N
Infineon Technologies
IPC30S2SN08NX2MA1
Alpha & Omega Semiconductor Inc.
AONR62921
onsemi
NVMFS3D0P04M8LT1G
Renesas Electronics America Inc
2SK3576-T1B-AT
Harris Corporation
IRF647
Vishay Siliconix
SIA430DJT-T1-GE3
Goford Semiconductor
G7P03S
Diodes Incorporated
DMT10H9M9LSS-13
Renesas Electronics America Inc