G7P03S
Goford Semiconductor
Goford Semiconductor
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Goford Semiconductor presents G7P03S, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, G7P03S delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1253 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Diodes Incorporated
DMT10H9M9LSS-13
Renesas Electronics America Inc
2SK1313S-E
Infineon Technologies
SPI07N65C3IN
Diodes Incorporated
DMP3007SCG-13
onsemi
NTPF600N80S3Z
Renesas
RQA0002DNSTB-E
onsemi
STP3N50E
Vishay Siliconix
IRL530PBF-BE3
Diodes Incorporated
DMN3060LWQ-13
Diodes Incorporated