SQ4840EY-T1_BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 20.7A 8SOIC
$3.46
Available to order
Reference Price (USD)
1+
$3.46000
500+
$3.4254
1000+
$3.3908
1500+
$3.3562
2000+
$3.3216
2500+
$3.287
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SQ4840EY-T1_BE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SQ4840EY-T1_BE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 7.1W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SIHP8N50D-GE3
onsemi
NTD4810N-35G
STMicroelectronics
STD120N4F6
Panjit International Inc.
PJQ4446P_R2_00001
Fairchild Semiconductor
FQP2N80
Rohm Semiconductor
RF4L040ATTCR
Infineon Technologies
BSC080N03LSGATMA1
Vishay Siliconix
IRLZ24PBF-BE3
Vishay Siliconix
SIHFR430ATR-GE3
Vishay Siliconix