FQP2N80
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 800V 2.4A TO220-3
$0.67
Available to order
Reference Price (USD)
1,000+
$0.63893
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Fairchild Semiconductor presents FQP2N80, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FQP2N80 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.3Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Rohm Semiconductor
RF4L040ATTCR
Infineon Technologies
BSC080N03LSGATMA1
Vishay Siliconix
IRLZ24PBF-BE3
Vishay Siliconix
SIHFR430ATR-GE3
Vishay Siliconix
SI4421DY-T1-E3
IXYS
IXTA62N15P-TRL
Diodes Incorporated
DMJ70H1D3SJ3
STMicroelectronics
STP33N60DM6
Infineon Technologies
IRF9540NPBF
IXYS