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SQ4425EY-T1_GE3

Vishay Siliconix
SQ4425EY-T1_GE3 Preview
Vishay Siliconix
MOSFET P-CHANNEL 30V 18A 8SOIC
$2.02
Available to order
Reference Price (USD)
2,500+
$0.89870
5,000+
$0.86751
12,500+
$0.85050
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 6.8W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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