CSD19532Q5B
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 100A 8VSON
$2.88
Available to order
Reference Price (USD)
1+
$2.88000
500+
$2.8512
1000+
$2.8224
1500+
$2.7936
2000+
$2.7648
2500+
$2.736
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
CSD19532Q5B by Texas Instruments is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, CSD19532Q5B ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
BSC010N04LSIATMA1
Vishay Siliconix
SIR464DP-T1-GE3
Micro Commercial Co
MCT04P06-TP
Nexperia USA Inc.
BUK9Y14-80E,115
Vishay Siliconix
SIR414DP-T1-GE3
Goford Semiconductor
G12P04K
Panjit International Inc.
PJP60R390E_T0_00001
Nexperia USA Inc.
BUK7M22-80EX
Renesas Electronics America Inc
2SK2552B-T1-AT
Taiwan Semiconductor Corporation