SQ2361ES-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 2.8A SSOT23
$0.66
Available to order
Reference Price (USD)
3,000+
$0.23826
6,000+
$0.22374
15,000+
$0.20922
30,000+
$0.19906
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SQ2361ES-T1_GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SQ2361ES-T1_GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
STMicroelectronics
STD65N55F3
Alpha & Omega Semiconductor Inc.
AON7290
Infineon Technologies
IPL65R165CFDAUMA1
Sanken
2SK2701A
Microchip Technology
MSC40SM120JCU2
Vishay General Semiconductor - Diodes Division
VS-FC420SA15
onsemi
NTLJD3182FZTAG
Vishay Siliconix
IRFU9024PBF
Vishay Siliconix
SQ7414CENW-T1_GE3
Infineon Technologies