MSC40SM120JCU2
Microchip Technology
Microchip Technology
SICFET N-CH 1.2KV 55A SOT227
$47.67
Available to order
Reference Price (USD)
1+
$47.67000
500+
$47.1933
1000+
$46.7166
1500+
$46.2399
2000+
$45.7632
2500+
$45.2865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose MSC40SM120JCU2 by Microchip Technology. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with MSC40SM120JCU2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC
Related Products
Vishay General Semiconductor - Diodes Division
VS-FC420SA15
onsemi
NTLJD3182FZTAG
Vishay Siliconix
IRFU9024PBF
Vishay Siliconix
SQ7414CENW-T1_GE3
Infineon Technologies
BSC0902NSIATMA1
Infineon Technologies
SPS01N60C3BKMA1
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJG53G06A-F1-0100HF
Alpha & Omega Semiconductor Inc.
AOD464
STMicroelectronics
STFI7N80K5
Texas Instruments