SPD04N60S5
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 4.5A TO252-3
$0.63
Available to order
Reference Price (USD)
1+
$0.63000
500+
$0.6237
1000+
$0.6174
1500+
$0.6111
2000+
$0.6048
2500+
$0.5985
Exquisite packaging
Discount
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Optimize your electronic systems with SPD04N60S5, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SPD04N60S5 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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