SI5476DU-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 12A CHIPFET
$1.38
Available to order
Reference Price (USD)
3,000+
$0.58520
6,000+
$0.55594
15,000+
$0.53504
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SI5476DU-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SI5476DU-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® ChipFET™ Single
- Package / Case: PowerPAK® ChipFET™ Single
Related Products
IXYS
IXTP12N50P
IXYS
IXTP1N120P
onsemi
NTA4151PT1H
onsemi
FCP260N65S3
Infineon Technologies
IRFL4310TRPBF
Vishay Siliconix
SIHP12N60E-E3
Alpha & Omega Semiconductor Inc.
AOTF2606L
Rohm Semiconductor
RQ5E040AJTCL
Infineon Technologies
IPP60R520E6XKSA1
onsemi